Devices

T. W. Cecil, R.M. Weikle, A. W. Lichtenberger and A. R. Kerr, "Investigation of NbTiN Thin Films and AlN Tunnel Barriers with Ellipsometry for Superconducting Device Applications," Applied Superconductivity Conference, Seattle, Aug 2006.

 T. W. Cecil, Robert M. Weikle, Anthony R. Kerr and Arthur W. Lichtenberger, "Investigation of NbTiN Thin Films and AlN Tunnel Barriers with Ellipsometry for Superconducting Device Applications", submitted to the IEEE Transactions on Applied Superconductivity July 2006.

A. W. Lichtenberger, D. M. Lea, C. Li, F. L. Lloyd, M. J. Feldman, R. J. Mattauch, S.-K. Pan, A. R. Kerr "Fabrication of micron size Nb/Al-Al2O3/Nb junctions with a trilevel resist liftoff process," IEEE Trans. on Magnetics, vol. MAG-27, no. 2, pp. 3168-3171, March 1991.

A. W. Lichtenberger, C. P. McClay, R. J. Mattauch, M. J. Feldman, S.-K. Pan, and A. R. Kerr, "Fabrication of Nb/Al-Al₂O₃/Nb junctions with extremely low leakage currents," IEEE Trans. on Magnetics, vol. MAG-25, no. 2, pp. 1247-1250, March 1989.

A. R. Kerr and Y. Anand, "Millimeter-Wave Detectors with Improved Sensitivity and Dynamic Range Using Zero-Bias Low-Barrier Schottky Diodes," Microwave Journal, v. 24, no. 12, pp. 67-71, Dec. 1981, and v. 25, no. 1, p. 118, Jan. 1982.

Y. Anand, W. J. Morony, S. L. Ellis, A. R. Kerr, J. M. Lamb, "Low Cost, High Burnout Millimeter GaAs Schottky Barrier Flip-Chip Diodes," IEEE International Electron Devices Meeting, Digest of Technical Papers, p. 841, Dec. 1980.

E. Y. Chan, H. C. Card, E. S. Yang, A. R. Kerr, R. J. Mattauch, "Transport of Majority and Minority Carriers in 2-μm Diameter Pt-GaAs Schottky Barriers," with E. Y. Chen, et al., IEEE Trans. Electron Devices, vol. ED-26, no. 3, pp. 214-219, March 1979.