Investigation of NbTiN Thin Films and AlN Tunnel Barriers with Ellipsometry for Superconducting Device Applications

T. W. Cecil, Robert M. Weikle, Anthony R. Kerr and Arthur W. Lichtenberger

IEEE Transactions on Applied Superconductivity, Vol. 17, No. 2, pp. 3525-3528, June 2007. Link.

Nb/Al-AlOx/Nb edge junctions for distributed mixers

R. S. Amos, A. W. Lichtenberger, C. E. Tong, R. Blundell, S.-K. Pan, A. R. Kerr IEEE Trans. Applied Superconductivity, vol. 9, no. 2, pp.3878-3881, June 1999. Link.

Fabrication of micron size Nb/Al-Al2O3/Nb junctions with a trilevel resist liftoff process

A. W. Lichtenberger, D. M. Lea, C. Li, F. L. Lloyd, M. J. Feldman, R. J. Mattauch, S.-K. Pan, A. R. Kerr

IEEE Trans. on Magnetics, vol. MAG-27, no. 2, pp. 3168-3171, March 1991.

Fabrication of Nb/Al-Al2O3/Nb junctions with extremely low leakage currents

A. W. Lichtenberger, C. P. McClay, R. J. Mattauch, M. J. Feldman, S.-K. Pan, and A. R. Kerr

IEEE Trans. on Magnetics, vol. MAG-25, no. 2, pp. 1247-1250, March 1989.

Millimeter-Wave Detectors with Improved Sensitivity and Dynamic Range Using Zero-Bias Low-Barrier Schottky Diodes

A. R. Kerr and Y. Anand

Microwave Journal, v. 24, no. 12, pp. 67-71, Dec. 1981, and v. 25, no. 1, p. 118, Jan. 1982.

Low Cost, High Burnout Millimeter GaAs Schottky Barrier Flip-Chip Diodes

Y. Anand, W. J. Morony, S. L. Ellis, A. R. Kerr, J. M. Lamb

IEEE International Electron Devices Meeting, Digest of Technical Papers, p. 841, Dec. 1980.

Transport of Majority and Minority Carriers in 2-μm Diameter Pt-GaAs Schottky Barriers

E. Y. Chan, H. C. Card, E. S. Yang, A. R. Kerr, R. J. Mattauch

IEEE Trans. Electron Devices, vol. ED-26, no. 3, pp. 214-219, March 1979.